vn0550 features free from secondary breakdown low power drive requirement ease of paralleling low c iss and fast switching speeds excellent thermal stability integral source-drain diode high input impedance and high gain complementary n- and p-channel devices applications motor controls converters ampli? ers switches power supply circuits drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) ? ? ? ? ? ? ? ? ? ? ? ? ? ? general description the supertex vn0550 is an enhancement-mode (normally- off) transistor that utilizes a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coef? cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ordering information device package bv dss /bv dgs (v) r ds(on) (max) () i d(on) (min) (ma) vn0550n3 to-92 500 60 150 VN0550N3-G absolute maximum ratings parameter value drain to source voltage bv dss drain to gate voltage bv dgs gate to source voltage 20v operating and storage temperature -55c to +150c soldering temperature 1 +300c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. notes : 1. distance of 1.6mm from case for 10 seconds. pin con? guration n-channel enhancement-mode vertical dmos fets d g s to-92 (front view) -g indicates package is rohs compliant (green)
2 vn0550 electrical characteristics (t a = 25c unless otherwise speci? ed) symbol parameter min typ max units conditions bv dss drain-to-source breakdown voltage 500 - - v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 - 4.0 v v gs = v ds , i d = 1.0ma v gs(th) change in v gs(th) with temperature - -3.8 -5.0 mv/ o cv gs = v ds , i d = 1.0ma i gss gate body leakage current - - 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - 10 a v gs = 0v, v ds = max rating - - 1.0 ma v gs = 0v, v ds = 0.8 max rating, t a = 125 o c i d(on) on-state drain current - 100 - ma v gs = 5.0v, v ds = 25v 150 350 - v gs = 10v, v ds = 25v r ds(on) static drain-to-source on-state resistance -45 - v gs = 5.0v, i d = 50ma -4060 v gs = 10v, i d = 50ma r ds(on) change in r ds(on) with temperature - 1.0 1.7 %/ o cv gs = 10v, i d = 50ma g fs forward transconductance 50 100 - mmho v ds = 25v, i d = 50ma c iss input capacitance - 45 55 pf v gs = 0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - 8.0 10 c rss reverse transfer capacitance - 2.0 5.0 t d(on) turn-on time - - 10 ns v dd = 25v, i d = 150ma, r gen = 25? t r rise time - - 15 t d(off) turn-off time - - 10 t f fall time - 10 v sd diode forward voltage drop - 0.8 - v v gs = 0v, i sd = 500ma t rr reverse recovery time - 300 - ns v gs = 0v, i sd = 500ma notes: 1. all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. switching waveforms and test circuit thermal characteristics device package i d (continuous) * (ma) i d (pulsed) (ma) power dissipation @t c = 25 o c (w) jc ( o c/w) ja ( o c/w) i dr * (ma) i drm (ma) vn0550 to-92 50 250 1.0 125 170 50 250 notes: * i d (continuous) is limited by max rated t j . 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 10v v dd r gen 0v 0v
3 vn0550 typical performance curves output characteristics 0.5 0.4 0.3 0.2 0.1 0 v ds (volts) i d ) s e r e p m a ( saturation characteristics 0.25 0.20 0.15 0.10 0.05 0 v ds (volts) i d ) s e r e p m a ( maximum rated safe operating area 1 1000 100 10 0.01 0.1 1.0 0.001 v ds (volts) i d ) s e r e p m a ( thermal response characteristics ) d e z i l a m r o n ( e c n a t s i s e r l a m r e h t 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 t p (seconds) transconductance vs. drain current 0.40 0.32 0.24 0.16 0.08 0 0 0.5 0.1 0.2 0.3 0.4 g s f ) s n e m e i s ( i d (amperes) power dissipation vs. case temperature 0150 100 50 10 8 6 4 2 0 125 75 25 t c ( c) p d ) s t t a w ( to-92 p d = 1w t c = 25 c to-92 t a = -55 c t a = 25 c t a = 125 c v ds = 25v 0102030 50 40 v gs = 10v 8v 6v 4v 0246 10 8 v gs = 10v 6v 8v 4v 0 to-92 (dc) t c = 25 c
4 vn0550 typical performance curves (cont.) c oss gate drive dynamic characteristics q g (nanocoulombs) v s g ) s t l o v ( t j ( c) v ) h t ( s g ) d e z i l a m r o n ( v ds (th) and r variation with temperature on-resistance vs. drain current r ) n o ( s d ) s m h o ( v b s s d ) d e z i l a m r o n ( t j ( c) transfer characteristics v gs (volts) i d ) s e r e p m a ( capacitance vs. drain-to-source voltage 100 75 50 25 0 ) s d a r a f o c i p ( c v ds (volts) i d (amperes) bv dss variation with temperature 0 10203040 0246810 0.5 0.4 0.3 0.2 0.1 0 -50 0 50 100 150 1.1 1.0 0.9 100 80 60 40 20 0 1.4 1.2 1.0 0.8 0.6 10 8 6 4 2 0 0.2 0.4 0.6 0.8 1.0 -50 0 50 100 150 50 pf v ds = 40v v ds = 10v 105 pf v (th) @ 1ma v gs = 5v v gs = 10v t = -55 a c v ds = 25v c iss c rss 25 c 150 c 0 0.1 0.2 0.3 0.5 0.4 r ds(on) @ 10v, 50ma f = 1mhz 112 pf 1.8 1.4 1.0 0.6 0.2 0 r ) n o ( s d ) d e z i l a m r o n (
5 vn0550 (the package drawing(s) in this data sheet may not re? ect the most current speci? cations. for the latest package outline information go to http://www.supertex.com/packaging.html .) to-92 package outline 1 2 3 seating plane 1 2 3 front view 0.175 - 0.205 0.170 - 0.210 0.500 min 0.014 - 0.022 0.045 - 0.055 0.095 - 0.105 0.125 - 0.165 0.135 min 0.080 - 0.105 0.014 - 0.022 side view bottom view notes: all dimensions are in millimeters; all angles in degrees. doc.# dsfp-vn0550 a042607
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